Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
D2PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
380 W
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 4,845
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 5,862
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
2
€ 4,845
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 5,862
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
2
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
2 - 18 | € 4,845 | € 9,69 |
20 - 48 | € 4,37 | € 8,74 |
50 - 98 | € 4,085 | € 8,17 |
100 - 198 | € 3,80 | € 7,60 |
200+ | € 1,948 | € 3,90 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
D2PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
380 W
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.