N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serija
StrongIRFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.83mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 90,25
€ 1,805 Each (In a Tube of 50) (be PVM)
€ 109,20
€ 2,184 Each (In a Tube of 50) (su PVM)
50
€ 90,25
€ 1,805 Each (In a Tube of 50) (be PVM)
€ 109,20
€ 2,184 Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,805 | € 90,25 |
| 100 - 200 | € 1,615 | € 80,75 |
| 250+ | € 1,568 | € 78,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serija
StrongIRFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.83mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products