Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
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P.O.A.
Gamybinė pakuotė (Vamzdelis)
5
P.O.A.
Gamybinė pakuotė (Vamzdelis)
5
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products