Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
9.3 A
Maximum Drain Source Voltage
200 V
Serija
HEXFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
82 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.54mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.69mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
8.77mm
Produkto aprašymas
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 40,80
€ 0,816 Each (In a Tube of 50) (be PVM)
€ 49,37
€ 0,987 Each (In a Tube of 50) (su PVM)
50
€ 40,80
€ 0,816 Each (In a Tube of 50) (be PVM)
€ 49,37
€ 0,987 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 0,816 | € 40,80 |
| 100 - 200 | € 0,645 | € 32,25 |
| 250 - 450 | € 0,604 | € 30,21 |
| 500 - 1200 | € 0,564 | € 28,22 |
| 1250+ | € 0,522 | € 26,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
9.3 A
Maximum Drain Source Voltage
200 V
Serija
HEXFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
82 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.54mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.69mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
8.77mm
Produkto aprašymas
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products