Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF-8 IPT007N06NATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
60 V
Serija
OptiMOS™ 5
Pakuotės tipas
HSOF-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
10.1mm
Ilgis
10.58mm
Typical Gate Charge @ Vgs
216 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Forward Diode Voltage
1V
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 8 075,00
€ 4,038 Each (On a Reel of 2000) (be PVM)
€ 9 770,75
€ 4,886 Each (On a Reel of 2000) (su PVM)
2000
€ 8 075,00
€ 4,038 Each (On a Reel of 2000) (be PVM)
€ 9 770,75
€ 4,886 Each (On a Reel of 2000) (su PVM)
2000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
60 V
Serija
OptiMOS™ 5
Pakuotės tipas
HSOF-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
10.1mm
Ilgis
10.58mm
Typical Gate Charge @ Vgs
216 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Forward Diode Voltage
1V
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products