Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SuperSO8 5 x 6 Dual
Serija
OptiMOS™ -T2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
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€ 2 945,00
€ 0,589 Each (On a Reel of 5000) (be PVM)
€ 3 563,45
€ 0,713 Each (On a Reel of 5000) (su PVM)
5000
€ 2 945,00
€ 0,589 Each (On a Reel of 5000) (be PVM)
€ 3 563,45
€ 0,713 Each (On a Reel of 5000) (su PVM)
5000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SuperSO8 5 x 6 Dual
Serija
OptiMOS™ -T2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products