Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1

RS kodas: 262-5848Gamintojas: InfineonGamintojo kodas: IPB013N06NF2SATMA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PG-TO263-3

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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€ 1,71

Each (In a Pack of 2) (be PVM)

€ 2,069

Each (In a Pack of 2) (su PVM)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 1,71

Each (In a Pack of 2) (be PVM)

€ 2,069

Each (In a Pack of 2) (su PVM)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PG-TO263-3

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more