Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
319.2 W
Number of Transistors
1
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
30kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
1950pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
2.38mJ
Kilmės šalis
China
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
319.2 W
Number of Transistors
1
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
30kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
1950pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
2.38mJ
Kilmės šalis
China
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.