Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.36 x 4.57 x 15.95mm
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.81mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
860pF
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 1,89
Each (In a Pack of 10) (be PVM)
€ 2,287
Each (In a Pack of 10) (su PVM)
10
€ 1,89
Each (In a Pack of 10) (be PVM)
€ 2,287
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
10 - 40 | € 1,89 | € 18,90 |
50 - 90 | € 1,785 | € 17,85 |
100 - 240 | € 1,732 | € 17,32 |
250 - 490 | € 1,628 | € 16,28 |
500+ | € 1,522 | € 15,22 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.36 x 4.57 x 15.95mm
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.81mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
860pF
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.