Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current
22.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Kaiščių skaičius
2 + Tab
Maximum Forward Voltage Drop
2.85V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
70A
Kilmės šalis
Malaysia
Produkto aprašymas
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
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€ 2,232
Each (In a Tube of 500) (be PVM)
€ 2,701
Each (In a Tube of 500) (su PVM)
500
€ 2,232
Each (In a Tube of 500) (be PVM)
€ 2,701
Each (In a Tube of 500) (su PVM)
500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current
22.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Kaiščių skaičius
2 + Tab
Maximum Forward Voltage Drop
2.85V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
70A
Kilmės šalis
Malaysia
Produkto aprašymas
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products