SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
AG-EASY1B-2
Serija
F4
Tvirtinimo tipas
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
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€ 136,80
už 1 vnt. (be PVM)
€ 165,53
už 1 vnt. (su PVM)
Standartas
1
€ 136,80
už 1 vnt. (be PVM)
€ 165,53
už 1 vnt. (su PVM)
Standartas
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 136,80 |
| 5 - 9 | € 134,90 |
| 10 - 14 | € 132,05 |
| 15 - 19 | € 129,20 |
| 20+ | € 126,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
AG-EASY1B-2
Serija
F4
Tvirtinimo tipas
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products