Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

RS kodas: 753-2813PGamintojas: InfineonGamintojo kodas: BSP317PH6327XTSA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Serija

SIPMOS®

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Plotis

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.5mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.6mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 5,26

€ 0,526 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 6,36

€ 0,636 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
Pasirinkite pakuotės tipą

Gamybinė pakuotė (Ritė)

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 5,26
20€ 10,52
30€ 15,78
40€ 21,04
50€ 26,30
60€ 31,56
70€ 36,82
80€ 42,08
90€ 47,34
100€ 52,60
110€ 57,86
120€ 63,12
130€ 68,38
140€ 73,64
150€ 78,90
sticker-462

€ 5,26

€ 0,526 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 6,36

€ 0,636 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą

Gamybinė pakuotė (Ritė)

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 5,26
20€ 10,52
30€ 15,78
40€ 21,04
50€ 26,30
60€ 31,56
70€ 36,82
80€ 42,08
90€ 47,34
100€ 52,60
110€ 57,86
120€ 63,12
130€ 68,38
140€ 73,64
150€ 78,90
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Serija

SIPMOS®

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Plotis

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.5mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.6mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more