Techniniai dokumentai
Specifikacijos
Markė
FujiMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
5.1 kW
Pakuotės tipas
M271
Configuration
Series
Tvirtinimo tipas
Screw Mount
Channel Type
N
Kaiščių skaičius
4
Matmenys
172 x 89 x 38mm
Produkto aprašymas
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1
Techniniai dokumentai
Specifikacijos
Markė
FujiMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
5.1 kW
Pakuotės tipas
M271
Configuration
Series
Tvirtinimo tipas
Screw Mount
Channel Type
N
Kaiščių skaičius
4
Matmenys
172 x 89 x 38mm
Produkto aprašymas
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.