Fairchild HGTG12N60A4D IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole

RS kodas: 671-5420Gamintojas: Fairchild SemiconductorGamintojo kodas: HGTG12N60A4D
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Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Matmenys

15.87 x 4.82 x 20.82mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Fairchild HGTG12N60A4D IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole
Pasirinkite pakuotės tipą
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P.O.A.

Fairchild HGTG12N60A4D IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Matmenys

15.87 x 4.82 x 20.82mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Produkto aprašymas

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more