Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A

RS kodas: 669-7596Gamintojas: DiodesZetexGamintojo kodas: ZVP2106A
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

E-Line

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

4.77mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 7,18

€ 0,718 Each (In a Pack of 10) (be PVM)

€ 8,69

€ 0,869 Each (In a Pack of 10) (su PVM)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Pasirinkite pakuotės tipą
sticker-462

€ 7,18

€ 0,718 Each (In a Pack of 10) (be PVM)

€ 8,69

€ 0,869 Each (In a Pack of 10) (su PVM)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
10 - 30€ 0,718€ 7,18
40 - 190€ 0,648€ 6,48
200 - 990€ 0,577€ 5,77
1000 - 1990€ 0,502€ 5,02
2000+€ 0,431€ 4,31

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

E-Line

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

4.77mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina