Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
SOD-523
Maximum Continuous Forward Current
30mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
2
Maximum Forward Voltage Drop
370mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
200mA
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 6,08
€ 0,061 Each (In a Pack of 100) (be PVM)
€ 7,36
€ 0,074 Each (In a Pack of 100) (su PVM)
Standartas
100

€ 6,08
€ 0,061 Each (In a Pack of 100) (be PVM)
€ 7,36
€ 0,074 Each (In a Pack of 100) (su PVM)
Standartas
100

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
100 - 400 | € 0,061 | € 6,08 |
500 - 900 | € 0,056 | € 5,60 |
1000 - 2900 | € 0,041 | € 4,08 |
3000 - 5900 | € 0,035 | € 3,52 |
6000+ | € 0,034 | € 3,42 |
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
SOD-523
Maximum Continuous Forward Current
30mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
2
Maximum Forward Voltage Drop
370mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
200mA
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.