Techniniai dokumentai
Specifikacijos
Memory Size
4kbit
Organisation
512 x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.48mm
Maximum Operating Supply Voltage
3.65 V
Maksimali darbinė temperatūra
+85 °C
Number of Words
512
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,205
Each (In a Pack of 5) (be PVM)
€ 2,668
Each (In a Pack of 5) (su PVM)
5
€ 2,205
Each (In a Pack of 5) (be PVM)
€ 2,668
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 10 | € 2,205 | € 11,02 |
15 - 25 | € 1,942 | € 9,71 |
30 - 95 | € 1,89 | € 9,45 |
100 - 495 | € 1,68 | € 8,40 |
500+ | € 1,628 | € 8,14 |
Techniniai dokumentai
Specifikacijos
Memory Size
4kbit
Organisation
512 x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.48mm
Maximum Operating Supply Voltage
3.65 V
Maksimali darbinė temperatūra
+85 °C
Number of Words
512
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.