Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
Power
Typical Power Gain
21 dB
Typical Output Power
27dBm
Typical Noise Figure
5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
MSOP
Kaiščių skaičius
8
Matmenys
3.1 x 3.1 x 0.95mm
Aukštis
0.95mm
Ilgis
3.1mm
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Plotis
3.1mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 15,015
Each (On a Reel of 50) (be PVM)
€ 18,168
Each (On a Reel of 50) (su PVM)
50
€ 15,015
Each (On a Reel of 50) (be PVM)
€ 18,168
Each (On a Reel of 50) (su PVM)
50
Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
Power
Typical Power Gain
21 dB
Typical Output Power
27dBm
Typical Noise Figure
5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
MSOP
Kaiščių skaičius
8
Matmenys
3.1 x 3.1 x 0.95mm
Aukštis
0.95mm
Ilgis
3.1mm
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Plotis
3.1mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.