Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Serija
SQ Rugged
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.38mm
Minimali darbinė temperatūra
-55 °C
Automotive Standard
AEC-Q101
Produkto aprašymas
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
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€ 8,08
€ 1,615 Each (In a Pack of 5) (be PVM)
€ 9,78
€ 1,954 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 8,08
€ 1,615 Each (In a Pack of 5) (be PVM)
€ 9,78
€ 1,954 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,615 | € 8,08 |
| 50 - 120 | € 1,472 | € 7,36 |
| 125 - 245 | € 1,378 | € 6,89 |
| 250 - 495 | € 1,282 | € 6,41 |
| 500+ | € 1,235 | € 6,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Serija
SQ Rugged
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.38mm
Minimali darbinė temperatūra
-55 °C
Automotive Standard
AEC-Q101
Produkto aprašymas
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products