Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Serija
SQ Rugged
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
1.55mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 20,90
€ 2,09 Each (In a Pack of 10) (be PVM)
€ 25,29
€ 2,529 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 20,90
€ 2,09 Each (In a Pack of 10) (be PVM)
€ 25,29
€ 2,529 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 2,09 | € 20,90 |
| 50 - 90 | € 1,662 | € 16,62 |
| 100 - 240 | € 1,472 | € 14,72 |
| 250 - 490 | € 1,378 | € 13,78 |
| 500+ | € 1,14 | € 11,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Serija
SQ Rugged
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
1.55mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products