Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.26mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.12mm
Produkto aprašymas
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 115,00
€ 2,30 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 139,15
€ 2,783 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
€ 115,00
€ 2,30 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 139,15
€ 2,783 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
50
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 120 | € 2,30 | € 11,50 |
| 125 - 245 | € 2,05 | € 10,25 |
| 250 - 495 | € 1,95 | € 9,75 |
| 500+ | € 1,80 | € 9,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.26mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.12mm
Produkto aprašymas
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products