Dual P-Channel MOSFET Transistor, 2.4 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-E3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+175 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Aukštis
1.55mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Taiwan, Province Of China
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P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
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Patikrinkite dar kartą.
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Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+175 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Aukštis
1.55mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Taiwan, Province Of China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products