Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
5mm
Transistor Material
Si
Plotis
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 16,15
€ 1,615 Each (In a Pack of 10) (be PVM)
€ 19,54
€ 1,954 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 16,15
€ 1,615 Each (In a Pack of 10) (be PVM)
€ 19,54
€ 1,954 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 1,615 | € 16,15 |
| 50 - 90 | € 1,52 | € 15,20 |
| 100 - 240 | € 1,378 | € 13,78 |
| 250 - 490 | € 1,282 | € 12,82 |
| 500+ | € 1,235 | € 12,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
5mm
Transistor Material
Si
Plotis
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products