Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3

RS kodas: 919-4218Gamintojas: VishayGamintojo kodas: SI4090DY-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Serija

ThunderFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Taiwan, Province Of China

Produkto aprašymas

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1 581,75

€ 0,633 Each (On a Reel of 2500) (be PVM)

€ 1 913,92

€ 0,766 Each (On a Reel of 2500) (su PVM)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
sticker-462

€ 1 581,75

€ 0,633 Each (On a Reel of 2500) (be PVM)

€ 1 913,92

€ 0,766 Each (On a Reel of 2500) (su PVM)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Serija

ThunderFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Taiwan, Province Of China

Produkto aprašymas

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina