P-Channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin SOT-23 Vishay SI2343DS-T1-E3

RS kodas: 710-3279Gamintojas: VishayGamintojo kodas: SI2343DS-T1-E3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

53 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

750 mW

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

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Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
€ 0,472Each (In a Pack of 20) (be PVM)
Sandėlio informacija laikinai nepasiekiama.

P.O.A.

Each (In a Pack of 5) (be PVM)

P-Channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin SOT-23 Vishay SI2343DS-T1-E3
Pasirinkite pakuotės tipą
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P.O.A.

Each (In a Pack of 5) (be PVM)

P-Channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin SOT-23 Vishay SI2343DS-T1-E3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
€ 0,472Each (In a Pack of 20) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

53 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

750 mW

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
€ 0,472Each (In a Pack of 20) (be PVM)