Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF

RS kodas: 542-9563Gamintojas: VishayGamintojo kodas: IRFBG20PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 1,95

€ 1,95 už 1 vnt. (be PVM)

€ 2,36

€ 2,36 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,95

€ 1,95 už 1 vnt. (be PVM)

€ 2,36

€ 2,36 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 1,95
10 - 49€ 1,66
50 - 99€ 1,57
100 - 249€ 1,47
250+€ 1,38

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more