Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF

RS kodas: 541-0452Gamintojas: VishayGamintojo kodas: IRF640PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Galbūt jus domina
N-channel MOSFET,IRF640 18A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF640 18A 200V 50pcs
P.O.A.1 Tube of 50 (be PVM)
N-channel MOSFET,IRF640 18A 200V
P.O.A.Each (In a Pack of 5) (be PVM)
Sandėlio informacija laikinai nepasiekiama.

€ 73,62

€ 1,472 Each (In a Tube of 50) (be PVM)

€ 89,08

€ 1,781 Each (In a Tube of 50) (su PVM)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
sticker-462

€ 73,62

€ 1,472 Each (In a Tube of 50) (be PVM)

€ 89,08

€ 1,781 Each (In a Tube of 50) (su PVM)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 1,472€ 73,62
100 - 200€ 1,282€ 64,12
250+€ 1,188€ 59,38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF640 18A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF640 18A 200V 50pcs
P.O.A.1 Tube of 50 (be PVM)
N-channel MOSFET,IRF640 18A 200V
P.O.A.Each (In a Pack of 5) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF640 18A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF640 18A 200V 50pcs
P.O.A.1 Tube of 50 (be PVM)
N-channel MOSFET,IRF640 18A 200V
P.O.A.Each (In a Pack of 5) (be PVM)