Vishay Siliconix TrenchFET P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70-6L SQA405EJ-T1_GE3

RS kodas: 178-3711Gamintojas: Vishay SiliconixGamintojo kodas: SQA405EJ-T1_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

SC-70-6L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

13.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

2.2mm

Typical Gate Charge @ Vgs

26 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 572,85

€ 0,191 Each (On a Reel of 3000) (be PVM)

€ 693,15

€ 0,231 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70-6L SQA405EJ-T1_GE3
sticker-462

€ 572,85

€ 0,191 Each (On a Reel of 3000) (be PVM)

€ 693,15

€ 0,231 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70-6L SQA405EJ-T1_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

SC-70-6L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

13.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

2.2mm

Typical Gate Charge @ Vgs

26 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more