Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

RS kodas: 178-3670Gamintojas: Vishay SiliconixGamintojo kodas: SiDR392DP-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK SO-8DC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Plotis

5mm

Ilgis

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.07mm

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Sandėlio informacija laikinai nepasiekiama.

€ 3 277,50

€ 1,092 Each (On a Reel of 3000) (be PVM)

€ 3 965,78

€ 1,321 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3
sticker-462

€ 3 277,50

€ 1,092 Each (On a Reel of 3000) (be PVM)

€ 3 965,78

€ 1,321 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK SO-8DC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Plotis

5mm

Ilgis

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.07mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more