Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S

RS kodas: 168-7983Gamintojas: ToshibaGamintojo kodas: TK56A12N1,S4X(S
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.5mm

Ilgis

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 68,88

€ 1,378 Each (In a Tube of 50) (be PVM)

€ 83,34

€ 1,667 Each (In a Tube of 50) (su PVM)

Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
sticker-462

€ 68,88

€ 1,378 Each (In a Tube of 50) (be PVM)

€ 83,34

€ 1,667 Each (In a Tube of 50) (su PVM)

Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.5mm

Ilgis

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more