Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

RS kodas: 168-7964Gamintojas: ToshibaGamintojo kodas: TK20J60W,S1VQ(O
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Serija

TK

Pakuotės tipas

TO-3PN

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.5mm

Number of Elements per Chip

1

Ilgis

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

20mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 140,12

€ 5,605 Each (In a Tube of 25) (be PVM)

€ 169,55

€ 6,782 Each (In a Tube of 25) (su PVM)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
sticker-462

€ 140,12

€ 5,605 Each (In a Tube of 25) (be PVM)

€ 169,55

€ 6,782 Each (In a Tube of 25) (su PVM)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Serija

TK

Pakuotės tipas

TO-3PN

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.5mm

Number of Elements per Chip

1

Ilgis

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

20mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more