Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220
Serija
TK
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Aukštis
15.1mm
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
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€ 12,59
€ 2,518 Each (In a Pack of 5) (be PVM)
€ 15,23
€ 3,047 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 12,59
€ 2,518 Each (In a Pack of 5) (be PVM)
€ 15,23
€ 3,047 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,518 | € 12,59 |
| 25 - 45 | € 2,042 | € 10,21 |
| 50 - 120 | € 1,852 | € 9,26 |
| 125 - 245 | € 1,71 | € 8,55 |
| 250+ | € 1,52 | € 7,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220
Serija
TK
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Aukštis
15.1mm
Kilmės šalis
China
Produkto aprašymas
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products