Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG

RS kodas: 398-423PGamintojas: Taiwan SemiconductorGamintojo kodas: TSM2302CX RFG
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

3.69 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.05mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 34,75

€ 0,139 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 42,05

€ 0,168 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG
Pasirinkite pakuotės tipą
sticker-462

€ 34,75

€ 0,139 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 42,05

€ 0,168 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Ritė
250 - 450€ 0,139€ 6,95
500 - 950€ 0,13€ 6,50
1000 - 2450€ 0,123€ 6,15
2500+€ 0,116€ 5,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

3.69 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.05mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more