STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
124 nC @ 10 V
Plotis
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.75mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 6,84
€ 6,84 už 1 vnt. (be PVM)
€ 8,28
€ 8,28 už 1 vnt. (su PVM)
Standartas
1
€ 6,84
€ 6,84 už 1 vnt. (be PVM)
€ 8,28
€ 8,28 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 6,84 |
| 10 - 24 | € 6,27 |
| 25 - 99 | € 5,98 |
| 100 - 249 | € 5,22 |
| 250+ | € 5,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
124 nC @ 10 V
Plotis
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.75mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products