STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.15mm
Ilgis
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 202,35
€ 6,745 Each (In a Tube of 30) (be PVM)
€ 244,84
€ 8,161 Each (In a Tube of 30) (su PVM)
30
€ 202,35
€ 6,745 Each (In a Tube of 30) (be PVM)
€ 244,84
€ 8,161 Each (In a Tube of 30) (su PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 60 | € 6,745 | € 202,35 |
| 90 - 480 | € 5,605 | € 168,15 |
| 510 - 960 | € 4,94 | € 148,20 |
| 990+ | € 4,322 | € 129,68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.15mm
Ilgis
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products