STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Plotis
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
4.6mm
Minimali darbinė temperatūra
-65 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 10,21
€ 2,042 Each (In a Pack of 5) (be PVM)
€ 12,35
€ 2,471 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 10,21
€ 2,042 Each (In a Pack of 5) (be PVM)
€ 12,35
€ 2,471 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,042 | € 10,21 |
| 25 - 45 | € 1,90 | € 9,50 |
| 50 - 120 | € 1,71 | € 8,55 |
| 125 - 245 | € 1,568 | € 7,84 |
| 250+ | € 1,472 | € 7,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Plotis
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
4.6mm
Minimali darbinė temperatūra
-65 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products