STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerSO
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
9.6mm
Maksimali darbinė temperatūra
+165 °C
Aukštis
3.6mm
Typical Power Gain
14 dB
Produkto aprašymas
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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€ 98,80
€ 19,76 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 119,55
€ 23,91 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
5
€ 98,80
€ 19,76 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 119,55
€ 23,91 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 5 - 9 | € 19,76 |
| 10 - 24 | € 18,72 |
| 25 - 49 | € 17,67 |
| 50+ | € 17,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerSO
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
9.6mm
Maksimali darbinė temperatūra
+165 °C
Aukštis
3.6mm
Typical Power Gain
14 dB
Produkto aprašymas
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products