onsemi NVH SiC N-Channel MOSFET Transistor, 102 A, 1200 V, 4-Pin TO-247-4 NVH4L020N120SC1
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
102 A
Maximum Drain Source Voltage
1200 V
Serija
NVH
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
0.028 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 15 603,75
€ 34,675 Each (In a Tube of 450) (be PVM)
€ 18 880,54
€ 41,957 Each (In a Tube of 450) (su PVM)
450
€ 15 603,75
€ 34,675 Each (In a Tube of 450) (be PVM)
€ 18 880,54
€ 41,957 Each (In a Tube of 450) (su PVM)
450
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
102 A
Maximum Drain Source Voltage
1200 V
Serija
NVH
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
0.028 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products