onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Plotis
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 6,28
€ 0,251 Each (In a Pack of 25) (be PVM)
€ 7,60
€ 0,304 Each (In a Pack of 25) (su PVM)
Standartas
25
€ 6,28
€ 0,251 Each (In a Pack of 25) (be PVM)
€ 7,60
€ 0,304 Each (In a Pack of 25) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
25
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 25 - 75 | € 0,251 | € 6,28 |
| 100 - 225 | € 0,216 | € 5,40 |
| 250 - 475 | € 0,188 | € 4,70 |
| 500 - 975 | € 0,165 | € 4,12 |
| 1000+ | € 0,15 | € 3,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Plotis
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products