Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
10.67 x 4.83 x 16.51mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 5,75
€ 1,15 Each (In a Pack of 5) (be PVM)
€ 6,96
€ 1,392 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 5,75
€ 1,15 Each (In a Pack of 5) (be PVM)
€ 6,96
€ 1,392 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5

Sandėlio informacija laikinai nepasiekiama.
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
10.67 x 4.83 x 16.51mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.