Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
210 mA
Maximum Drain Source Voltage
50 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
340 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
1.25mm
Ilgis
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
0.9mm
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 202,35
€ 0,067 Each (On a Reel of 3000) (be PVM)
€ 244,84
€ 0,081 Each (On a Reel of 3000) (su PVM)
3000

€ 202,35
€ 0,067 Each (On a Reel of 3000) (be PVM)
€ 244,84
€ 0,081 Each (On a Reel of 3000) (su PVM)
3000

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
3000 - 3000 | € 0,067 | € 202,35 |
6000 - 12000 | € 0,064 | € 190,95 |
15000+ | € 0,061 | € 182,40 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
210 mA
Maximum Drain Source Voltage
50 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
340 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
1.25mm
Ilgis
2mm
Typical Gate Charge @ Vgs
1.1 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
0.9mm
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.