Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115

RS kodas: 103-8120Gamintojas: NexperiaGamintojo kodas: PMF170XP
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

2.2mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Sandėlio informacija laikinai nepasiekiama.

€ 171,00

€ 0,057 Each (On a Reel of 3000) (be PVM)

€ 206,91

€ 0,069 Each (On a Reel of 3000) (su PVM)

Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115
sticker-462

€ 171,00

€ 0,057 Each (On a Reel of 3000) (be PVM)

€ 206,91

€ 0,069 Each (On a Reel of 3000) (su PVM)

Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

2.2mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more