MagnaChip MPMC150B120RH, 7DM-2 , N-Channel Series IGBT Module, 150 A max, 1200 V, Panel Mount
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
735 W
Pakuotės tipas
7DM-2
Configuration
Series
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
70kHz
Transistor Configuration
Series
Matmenys
94 x 48 x 22mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 100,00
€ 100,00 už 1 vnt. (be PVM)
€ 121,00
€ 121,00 už 1 vnt. (su PVM)
1
€ 100,00
€ 100,00 už 1 vnt. (be PVM)
€ 121,00
€ 121,00 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 100,00 |
| 2 - 4 | € 90,00 |
| 5 - 9 | € 82,00 |
| 10+ | € 80,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
735 W
Pakuotės tipas
7DM-2
Configuration
Series
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
70kHz
Transistor Configuration
Series
Matmenys
94 x 48 x 22mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products