Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF

RS kodas: 543-0591PGamintojas: InfineonGamintojo kodas: IRLU024NPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

IPAK (TO-251)

Serija

HEXFET

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 5 V

Plotis

2.39mm

Aukštis

6.22mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Produkto aprašymas

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF
€ 0,702Each (In a Tube of 75) (be PVM)
Sandėlio informacija laikinai nepasiekiama.

€ 11,06

€ 0,55 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 13,38

€ 0,67 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF
Pasirinkite pakuotės tipą
sticker-462

€ 11,06

€ 0,55 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 13,38

€ 0,67 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
20 - 37€ 0,55
38+€ 0,53

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF
€ 0,702Each (In a Tube of 75) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

IPAK (TO-251)

Serija

HEXFET

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 5 V

Plotis

2.39mm

Aukštis

6.22mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Produkto aprašymas

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF
€ 0,702Each (In a Tube of 75) (be PVM)