Infineon HEXFET N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Plotis
4.83mm
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 40,42
€ 0,808 Each (In a Tube of 50) (be PVM)
€ 48,91
€ 0,978 Each (In a Tube of 50) (su PVM)
50
€ 40,42
€ 0,808 Each (In a Tube of 50) (be PVM)
€ 48,91
€ 0,978 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 0,808 | € 40,42 |
| 100 - 200 | € 0,631 | € 31,54 |
| 250 - 450 | € 0,606 | € 30,30 |
| 500 - 1200 | € 0,574 | € 28,69 |
| 1250+ | € 0,51 | € 25,51 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Ilgis
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Plotis
4.83mm
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products