Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ C6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 81,70
€ 4,085 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 98,86
€ 4,943 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

€ 81,70
€ 4,085 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 98,86
€ 4,943 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
20 - 96 | € 4,085 | € 16,34 |
100 - 196 | € 3,515 | € 14,06 |
200 - 496 | € 3,372 | € 13,49 |
500+ | € 2,992 | € 11,97 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ C6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.