Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
55 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
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€ 1 733,75
€ 0,347 Each (On a Reel of 5000) (be PVM)
€ 2 097,84
€ 0,42 Each (On a Reel of 5000) (su PVM)
5000
€ 1 733,75
€ 0,347 Each (On a Reel of 5000) (be PVM)
€ 2 097,84
€ 0,42 Each (On a Reel of 5000) (su PVM)
5000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
55 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products