Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™
Pakuotės tipas
TO 263
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 2 137,50
€ 2,138 Each (On a Reel of 1000) (be PVM)
€ 2 586,38
€ 2,587 Each (On a Reel of 1000) (su PVM)
1000
€ 2 137,50
€ 2,138 Each (On a Reel of 1000) (be PVM)
€ 2 586,38
€ 2,587 Each (On a Reel of 1000) (su PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™
Pakuotės tipas
TO 263
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products