Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
70 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
20kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
600pF
Maksimali darbinė temperatūra
+150 °C
Energy Rating
2.28mJ
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 13,87
€ 3,468 Each (In a Pack of 4) (be PVM)
€ 16,78
€ 4,196 Each (In a Pack of 4) (su PVM)
Standartas
4
€ 13,87
€ 3,468 Each (In a Pack of 4) (be PVM)
€ 16,78
€ 4,196 Each (In a Pack of 4) (su PVM)
Standartas
4
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 4 - 16 | € 3,468 | € 13,87 |
| 20 - 36 | € 3,278 | € 13,11 |
| 40 - 96 | € 3,135 | € 12,54 |
| 100 - 196 | € 2,945 | € 11,78 |
| 200+ | € 2,755 | € 11,02 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
70 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
20kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
600pF
Maksimali darbinė temperatūra
+150 °C
Energy Rating
2.28mJ
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products