Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Serija
OptiMOS P
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Plotis
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.33V
Automotive Standard
AEC-Q101
Produkto aprašymas
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 47,50
€ 0,095 Each (On a Reel of 500) (be PVM)
€ 57,48
€ 0,115 Each (On a Reel of 500) (su PVM)
500

€ 47,50
€ 0,095 Each (On a Reel of 500) (be PVM)
€ 57,48
€ 0,115 Each (On a Reel of 500) (su PVM)
500

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
500 - 500 | € 0,095 | € 47,50 |
1000 - 2000 | € 0,089 | € 44,65 |
2500 - 4500 | € 0,086 | € 42,75 |
5000 - 12000 | € 0,081 | € 40,38 |
12500+ | € 0,076 | € 38,00 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Serija
OptiMOS P
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Plotis
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.33V
Automotive Standard
AEC-Q101
Produkto aprašymas
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.